AMD illustra la tecnologia Triple-Gate
In occasione dell' International Conference Solid State Devices and Materials a Tokyo, i ricercatori di AMD hanno illustrato in dettaglio la creazione dei nuovi transistor triple-gate utilizzando la tecnologia SOI (silicon-on-insulator) e la tecnologia advanced metal gate:
"The research presented today maximizes transistor switching performance and decreases power-wasting leakage by combining several highly advanced technologies into a single structure.
A unique ultra-thin electrical path using fully depleted silicon-on-insulator (FDSOI) technology is surrounded on three sides with nickel-silicide metal gates. This combination of FDSOI and nickel-silicide metal gates has the effect of straining the silicon lattice within the electrical path to enhance carrier mobility.
Furthermore, the multi-gate, FDSOI structure increases the effective width of the electrical path in the transistor and also provides better electrical control of this path. These factors combine to provide higher ON current, lower OFF current and faster switching, thereby dramatically increasing the overall transistor performance."
Per ulteriori dettagli tecnici è possibile consultare il PDF presente a questo indirizzo.