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Samsung’s new 8GB HBM2 delivers the highest level of DRAM performance, featuring a 2.4Gbps pin speed at 1.2V, which translates into a performance upgrade of nearly 50 percent per each package, compared to the company’s 1st-generation 8GB HBM2 package with its 1.6Gbps pin speed at 1.2V and 2.0Gbps at 1.35V.



With these improvements, a single Samsung 8GB HBM2 package will offer a 307 gigabytes-per-second (GBps) data bandwidth, achieving 9.6 times faster data transmission than an 8 gigabit (Gb) GDDR5 chip, which provides a 32GBps data bandwidth.* Using four of the new HBM2 packages in a system will enable a 1.2 terabytes-per-second (TBps) bandwidth., which will improve overall system performance by as much as 50 percent, compared to a system that uses a 1.6Gbps HBM2.

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