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Timing della memoria:
CAS Latency (CL) 2.5T
RAS To CAS Delay (tRCD) 3T
RAS Precharge (tRP) 3T
RAS Active Time (tRAS) 6T
Row Cycle Time (tRC) 7T
Row Refresh Cycle Time (tRFC) 12T
Command Rate (CR) 1T
RAS To RAS Delay (tRRD) 2T
Write Recovery Time (tWR) 2T
Read To Write Delay (tRTW) 3T
Write To Read Delay (tWTR) 2T
Write CAS Latency (tWCL) 1T
Refresh Period (tREF) 200 MHz 3.9 us
DQS Skew Control Disattivato
DRAM Drive Strength Weak
DRAM Data Drive Strength 4 (No Reduction)
Max Async Latency 7 ns
Read Preamble Time 5.5 ns
Idle Cycle Limit 256
Dynamic Idle Cycle Counter Disattivato
Read/Write Queue Bypass 16
Bypass Max 7
32-byte Granularity Disattivato
sono gli stessi che tenevo sulle z503 fino ai 275mhz.....
eventualmente modifica questi....
Row Cycle Time (tRC) 9T
Row Refresh Cycle Time (tRFC) 17T
Max Async Latency 8 ns
Read Preamble Time 6 ns
Write To Read Delay (tWTR) 3T