jjk87
01-11-2008, 11:58
ho appena montato una ram da 256 mb (ddr pc2100 266mhz) esattamente identica a quella che già avevo...questo è quello che dice pc wizard:
General Information :
A0 : Empty
A1 : Empty
A2 (RAS 4, RAS 5) : 256 (Double Bank)
A3 : Empty
Information SPD EEPROM (A0) :
Manufacturer : Samsung
Part Number : M3 68L3223CTL-CB0
Serial Number : 21368801
Type : DDR-SDRAM PC-2100 (133 MHz) - [DDR-266]
Size : 256 MB (1 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Width : 64-bit
Error Correction Capability : No
Max. Burst Length : 8
Refresh : Reduced (.5x)7.8 µs, Self Refresh
Voltage : SSTL 2.5v
Prefetch Buffer : 2-bit
Manufacture : Week 9 of 2002
Supported Frequencies : 100 MHz, 133 MHz
CAS Latency (tCL) : 2 clocks @100 MHz, 2.5 clocks @133 MHz
RAS to CAS (tRCD) : 2 clocks @100 MHz, 3 clocks @133 MHz
RAS Precharge (tRP) : 2 clocks @100 MHz, 3 clocks @133 MHz
Cycle Time (tRAS) : 5 clocks @100 MHz, 6 clocks @133 MHz
Information SPD EEPROM (A2) :
Manufacturer : Hyundai Electronics
Part Number : HYMD132 645A8-H
Serial Number : 5503584A
Type : DDR-SDRAM PC-2100 (133 MHz) - [DDR-266]
Size : 256 MB (2 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Width : 64-bit
Error Correction Capability : No
Max. Burst Length : 8
Refresh : Normal (15.625 µs), Self Refresh
Voltage : SSTL 2.5v
Prefetch Buffer : 2-bit
Supported Frequencies : 100 MHz, 133 MHz
CAS Latency (tCL) : 2 clocks @100 MHz, 2.5 clocks @133 MHz
RAS to CAS (tRCD) : 2 clocks @100 MHz, 3 clocks @133 MHz
RAS Precharge (tRP) : 2 clocks @100 MHz, 3 clocks @133 MHz
Cycle Time (tRAS) : 5 clocks @100 MHz, 6 clocks @133 MHz
Memory Controller Information :
Memory Controller : Standard, EDO
Number of connectors : 4
Max. Module Size : 32 MB
Max. Memory Size : 128 MB
Supported Speed : 70ns, 60ns
Supported Voltages : 5v
Error Detection Method : No
Error Correction Capability : None
Current/Supported Interleave : 4-way/1-way
perchè sul pannello di controllo mi riconosce 256? e perchè A0 è segnato come empty? (ho 2 banchi uno nel primo slot e uno nel terzo...)
General Information :
A0 : Empty
A1 : Empty
A2 (RAS 4, RAS 5) : 256 (Double Bank)
A3 : Empty
Information SPD EEPROM (A0) :
Manufacturer : Samsung
Part Number : M3 68L3223CTL-CB0
Serial Number : 21368801
Type : DDR-SDRAM PC-2100 (133 MHz) - [DDR-266]
Size : 256 MB (1 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Width : 64-bit
Error Correction Capability : No
Max. Burst Length : 8
Refresh : Reduced (.5x)7.8 µs, Self Refresh
Voltage : SSTL 2.5v
Prefetch Buffer : 2-bit
Manufacture : Week 9 of 2002
Supported Frequencies : 100 MHz, 133 MHz
CAS Latency (tCL) : 2 clocks @100 MHz, 2.5 clocks @133 MHz
RAS to CAS (tRCD) : 2 clocks @100 MHz, 3 clocks @133 MHz
RAS Precharge (tRP) : 2 clocks @100 MHz, 3 clocks @133 MHz
Cycle Time (tRAS) : 5 clocks @100 MHz, 6 clocks @133 MHz
Information SPD EEPROM (A2) :
Manufacturer : Hyundai Electronics
Part Number : HYMD132 645A8-H
Serial Number : 5503584A
Type : DDR-SDRAM PC-2100 (133 MHz) - [DDR-266]
Size : 256 MB (2 rows, 4 banks)
Module Buffered : No
Module Registered : No
Module SLi Ready (EPP) : No
Width : 64-bit
Error Correction Capability : No
Max. Burst Length : 8
Refresh : Normal (15.625 µs), Self Refresh
Voltage : SSTL 2.5v
Prefetch Buffer : 2-bit
Supported Frequencies : 100 MHz, 133 MHz
CAS Latency (tCL) : 2 clocks @100 MHz, 2.5 clocks @133 MHz
RAS to CAS (tRCD) : 2 clocks @100 MHz, 3 clocks @133 MHz
RAS Precharge (tRP) : 2 clocks @100 MHz, 3 clocks @133 MHz
Cycle Time (tRAS) : 5 clocks @100 MHz, 6 clocks @133 MHz
Memory Controller Information :
Memory Controller : Standard, EDO
Number of connectors : 4
Max. Module Size : 32 MB
Max. Memory Size : 128 MB
Supported Speed : 70ns, 60ns
Supported Voltages : 5v
Error Detection Method : No
Error Correction Capability : None
Current/Supported Interleave : 4-way/1-way
perchè sul pannello di controllo mi riconosce 256? e perchè A0 è segnato come empty? (ho 2 banchi uno nel primo slot e uno nel terzo...)