sando
31-08-2006, 01:08
Ho 4 ram Kingston Hyperx DDR400 Pc3200 CL2 e nelle specifiche c'è questo "timing reference" che nn so come interpretare:
FEATURES:
Power supply : Vdd: 2.6V ± 0.2V, Vddq: 2.6V ± 0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Timing Reference: 2-3-2-6-1 at +2.6V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.250” (34.75mm), double sided component
PERFORMANCE:
Clock Cycle Time (tCK) 5ns (min.) / 10ns (max.)
Row Cycle Time (tRC) 55ns (min.)
Refresh Row Cycle Time (tRFC) 65ns (min.)
Row Active Time (tRAS) 40ns (min.) / 100,000ns (max.)
Power 3.825 W (operating)
UL Rating 94 V - 0
Operating Temperature 0o C to 70o C
Storage Temperature -55o C to +150o C
Vorrei sapere quali parametri impostare nel bios, senza overclock, anzichè lasciarlo "AUTO" ; le voci attuali sono queste:
Timing Mode: Auto
Memclock Index Value (Mhz): 333
CAS# Latency (Tcl): 2,5
Min RAS# active time (Tras): 7T
RAS# to CAS# delay (Trcd): 3T
Row precharge time (Trp): 3T
Row Cycle time (Trc): 10T
Row refresh cycle time (Trfc): 11T
Read to Write time (Trwt): 4T
Write recovery time (Twr): 3T
1T/2T Memory Timing: 2T
S/W DRAM Over 4G Remapping: Enabled
H/W DRAM Over 4G Remapping: Enabled
Grazie :D
FEATURES:
Power supply : Vdd: 2.6V ± 0.2V, Vddq: 2.6V ± 0.2V
Double-data-rate architecture; two data transfers per clock cycle
Bidirectional data strobe(DQS)
Differential clock inputs(CK and CK)
DLL aligns DQ and DQS transition with CK transition
Programmable Read latency 2 (clock)
Programmable Burst length (2, 4, 8)
Programmable Burst type (sequential & interleave)
Timing Reference: 2-3-2-6-1 at +2.6V
Edge aligned data output, center aligned data input
Auto & Self refresh, 7.8us refresh interval(8K/64ms refresh)
Serial presence detect with EEPROM
High Performance Heat Spreader
PCB : Height 1.250” (34.75mm), double sided component
PERFORMANCE:
Clock Cycle Time (tCK) 5ns (min.) / 10ns (max.)
Row Cycle Time (tRC) 55ns (min.)
Refresh Row Cycle Time (tRFC) 65ns (min.)
Row Active Time (tRAS) 40ns (min.) / 100,000ns (max.)
Power 3.825 W (operating)
UL Rating 94 V - 0
Operating Temperature 0o C to 70o C
Storage Temperature -55o C to +150o C
Vorrei sapere quali parametri impostare nel bios, senza overclock, anzichè lasciarlo "AUTO" ; le voci attuali sono queste:
Timing Mode: Auto
Memclock Index Value (Mhz): 333
CAS# Latency (Tcl): 2,5
Min RAS# active time (Tras): 7T
RAS# to CAS# delay (Trcd): 3T
Row precharge time (Trp): 3T
Row Cycle time (Trc): 10T
Row refresh cycle time (Trfc): 11T
Read to Write time (Trwt): 4T
Write recovery time (Twr): 3T
1T/2T Memory Timing: 2T
S/W DRAM Over 4G Remapping: Enabled
H/W DRAM Over 4G Remapping: Enabled
Grazie :D