Ecco i bachi del BA che non ci sono nel B2:
274 IDDIO Specification Exceeded During Power-Up Sequencing
Description
Processor current consumption may exceed the IDDIO maximum specified for C0/S0 operation during power-up sequencing.
Potential Effect on System
None expected if the VDDIO voltage regulator is sourced by a RUN (running) plane from the power supply during power-up sequencing. Otherwise, during power-up sequencing the VDDIO voltage regulator may shut down if IDDIO exceeds the platform budget or the power supply may shut down if
the SUS (suspend) rail current capacity is exceeded.
Suggested Workaround
Three options exist to ensure the VDDIO voltage regulator is sourced with sufficient current during processor power-up sequencing:
1. Enable the VDDIO voltage regulator after POWER_GOOD is asserted from the high-current (RUN) source rail.
2. Provide a path for a high-current (RUN) rail to source current to the VDDIO voltage regulator prior to POWER_GOOD assertion from the high-current (RUN) rail. This solution assumes the high-current (RUN) rail is enabled early enough relative to enabling the VDDIO voltage regulator.
3. Choose a power supply with increased capacity for the rail sourcing the VDDIO voltage regulator during power-up sequencing. The capacity required is system specific and should allocate 7 amps per processor in the power budget. The following is an example of a supply current capacity calculation assuming a 5 V suspend rail and 3 W rest of system power for a single-processor system. Other platform-specific factors such as power supply or regulator efficiencies should also be considered.
• Rest of system (non-processor) power = 3 W
• Processor power = 7 A/processor * 1 processor * 1.8 V = 12.6 W
• Source rail capacity = (rest of system power + processor power) / source rail voltage; (3 W + 12.6 W) / 5 V = 3.12 A
Fix Planned
Yes
Il fix non impatta le prestazioni: rende solo il boot un po' più complicato.
278 Incorrect Memory Controller Operation In Ganged Mode
Description
The DRAM controller 0 (DCT0) and DRAM controller 1 (DCT1) refresh counters may not be initialized to the same value using hardware controlled DRAM initialization when operating in ganged mode.
Potential Effect on System
Incorrect memory controller operation.
Suggested Workaround
BIOS should apply the following workaround prior to DRAM training when using hardwarecontrolled DRAM initialization and F2x110[4] (DctGangEn) is set to 1b.
1. Disable automatic refresh cycles by setting F2x08C[18] (DisAutoRefresh) to 1b.
2. Begin DRAM initialization by setting F2x090[0] to 1b.
3. Poll F2x090[0] until it reads 0b then wait at least 50 microseconds.
4. Enable automatic refresh cycles by clearing F2x08C[18] (DisAutoRefresh) to 0b.
5. Disable automatic refresh cycles by setting F2x08C[18] (DisAutoRefresh) to 1b.
6. Enable automatic refresh cycles by clearing F2x08C[18] (DisAutoRefresh) to 0b.
7. Begin DRAM training.
In addition, when resuming from S3, BIOS should apply the following workaround.
1. Disable automatic refresh cycles by setting F2x08C[18] (DisAutoRefresh) to 1b.
2. Initiate exit from self refresh by setting F2x090[1] to 1b.
3. Poll F2x090[1] until it reads 0b then wait at least 50 microseconds.
4. Enable automatic refresh cycles by clearing F2x08C[18] (DisAutoRefresh) to 0b.
5. Disable automatic refresh cycles by setting F2x08C[18] (DisAutoRefresh) to 1b.
6. Enable automatic refresh cycles by clearing F2x08C[18] (DisAutoRefresh) to 0b.
Fix Planned
Yes
Anche questo non impatta le prestazioni: rende più complicato il boot e il resume da standby, ma nulla di preoccupante
279 HyperTransport™ Link RTT and RON Specification Violations
Description
The RTT and RON specifications for the HyperTransport™ link may be violated on some processor revisions.
Potential Effect on System
These violations do not result in any other HyperTransport™ link electrical specification violations.
There are no known functional failures related to this problem.
Suggested Workaround
None required.
Fix Planned
Yes.
Questo errata non da particolari problemi...
